3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs
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Publicación: Congreso
1624015036117
18 de xuño de 2021
/research/publications/3d-simulations-of-random-dopant-induced-threshold-voltage-variability-in-inversionmode-in053ga047as-gaa-mosfets
- N. Seoane, A. Garcia–Loureiro, E. Comesaña, R. Valin, G. Indalecio, M. Aldegunde and K. Kalna
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