Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator
Intrinsic parameter fluctuations in state-of-the-art high electron mobility transistors (HEMTs) are studied using a 3D parallel drift-diffusion device simulator. Two sources of intrinsic parameter fluctuations have been considered: the random discrete dopants in the d-doped layer and the variations in the material composition of the channel. The effect of those two sources is investigated in a
120 nm gate length pseudomorphic HEMT with an In0.2Ga0.8As channel and in a 50 nm gate length InP HEMT with an In0.7Ga0.3As channel. We have found that the random discrete dopants in the d-doping layer are the major factor introducing the variations in the drive current and the device performance. In the devices studied, the variations in the drive current decrease as a function of
the gate voltage. Furthermore, at a fixed gate voltage, the variations decrease with the drain voltage in the 50 nm InP HEMT while in the 120 nm PHEMT the variations increase with the drain voltage.
Palabras clave: HEMT, 3D parallel drift diffusion simulation, Intrinsic parameter fluctuations, Random discrete dopants
Publicación: Artígo
1624014939385
18 de xuño de 2021
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Intrinsic parameter fluctuations in state-of-the-art high electron mobility transistors (HEMTs) are studied using a 3D parallel drift-diffusion device simulator. Two sources of intrinsic parameter fluctuations have been considered: the random discrete dopants in the d-doped layer and the variations in the material composition of the channel. The effect of those two sources is investigated in a
120 nm gate length pseudomorphic HEMT with an In0.2Ga0.8As channel and in a 50 nm gate length InP HEMT with an In0.7Ga0.3As channel. We have found that the random discrete dopants in the d-doping layer are the major factor introducing the variations in the drive current and the device performance. In the devices studied, the variations in the drive current decrease as a function of
the gate voltage. Furthermore, at a fixed gate voltage, the variations decrease with the drain voltage in the 50 nm InP HEMT while in the 120 nm PHEMT the variations increase with the drain voltage. - N. Seoane, A. J. Garcia-Loureiro, K. Kalna, A. Asenov - 10.1016/j.sse.2007.01.030
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