Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET
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Publicación: Artígo
1624014941779
18 de xuño de 2021
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- N. Seoane, G. Indalecio, E. Comesana, M. Aldegunde, A. J. Garcia-Loureiro and K. Kalna - 10.1109/TED.2013.2294213
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