Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold
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Publicación: Artígo
1624014945677
18 de xuño de 2021
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- G. Indalecio, N. Seoane, M. Aldegunde, K. Kalna, and A. J. García-Loureiro - 10.1166/jolpe.2015.1371
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