3D simulations of random dopant induced threshold voltage variability in inversion–mode In0.53Ga0.47As GAA MOSFETs

Publication: Congress

1624015036117

June 18, 2021

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- N. Seoane, A. Garcia–Loureiro, E. Comesaña, R. Valin, G. Indalecio, M. Aldegunde and K. Kalna

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