# Anisotropic Schrödinger Equation Quantum Corrections for 3D Finite Element Monte Carlo Simulations of Triangular SOI Fin-FET

Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Silicon-on-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: \langle 100\rangle and \langle 110\rangle . We have found that quantum anisotropy effects play the strongest role in the triangular-like \langle 100\rangle channel device increasing the drain current by \sim 13 % and slightly decreasing the current by 2% in the rectangular-like \langle 100\rangle channel device. The quantum anisotropy has a negligible effect in any device with the \langle 110\rangle channel orientation.

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Publication: Congress

1624015048561

June 18, 2021

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Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Silicon-on-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: \langle 100\rangle and \langle 110\rangle . We have found that quantum anisotropy effects play the strongest role in the triangular-like \langle 100\rangle channel device increasing the drain current by \sim 13 % and slightly decreasing the current by 2% in the rectangular-like \langle 100\rangle channel device. The quantum anisotropy has a negligible effect in any device with the \langle 110\rangle channel orientation. - M. A. Elmessary, D. Nagy, M. Aldegunde, J. Lindberg, W. Dettmer, D. Peri, A. Garcia-Loureiro, and K. Kalna

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