Article 281
  • Seoane, N. ; Indalecio, G. ; Aldegunde, M. ; Nagy, D. ; Elmessary, M.A. ; Garcia-Loureiro, A.J. ; Kalna, K.
  • IEEE Transactions on Electron Devices, 2016 - Q1

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

The fin-edge roughness (FER) and the TiN metal grain work function (MGW)-induced variability affecting OFF and ON device characteristics are studied and compared between a 10.4 nm gate length In0.53Ga0.47As FinFET and a 10.7 nm gate length Si FinFET. We have analyzed the impact of variability by assessing five figures of merit (threshold voltage, subthreshold slope, OFF-current, drain-induced-barrier-lowering, and ON-current) using the two state-of-the-art in-house-build 3-D simulation tools based on the finite-element method. Quantum-corrected 3-D drift-diffusion simulations are employed for variability studies in the subthreshold region while, in the ON-region, we use quantum-corrected 3-D ensemble Monte Carlo simulations. The In0.53Ga0.47As FinFET is more resilient to the FER and MGW variability in the subthreshold compared with the Si FinFET due to a stronger quantum carrier confinement present in the In0.53Ga0.47As channel. However, the ON-current variability is between 1.1 and 2.2 times larger for the In0.53Ga0.47As FinFET than for the Si counterpart, respectively.
Keywords: FinFETs, III-V materials, Si, fin-edge roughness (FER), gate work function variability, intrinsic parameter fluctuations
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