Congress 1161
  • G. Espiñeira, N. Seoane, D. Nagy, G. Indalecio and A.J. García-Loureiro
  • Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Granada, España. 2018

FoMPy: A figure of merit extraction tool for semiconductor device simulations

The aim of this work is to present an efficient tool that extracts the main figures of merit (FoM) of a semiconductor’s I-V curve and provides useful statistical parameters for variability studies. Two state-of-the-art devices have been used as benchmarks in order to show its capabilities. It includes several methods implemented to obtain the threshold voltage and allows the user to compare the results without compromising them by the methodology used. This study demonstrates the importance of choosing an appropriate method of extraction as the results may vary significantly thus making FoMPy an excellent tool to evaluate a device's performance.
Keywords: Python tool, threshold voltage, figure of merits, FinFETs, nanowires, FoMPy
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