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1074
Author/s
N. Seoane, G. Indalecio, A.J. Garcia-Loureiro and K. Kalna
DOI
10.1109/SISPAD.2016.7605192
Source
2016 International Conference on Simulation of Semiconductor Processes and Devices 2016. Nuremberg, Alemania. 2016
Research Areas
Language technologies
High performance computing
Impact of cross-section of 10.4 nm gate length In0.53Ga0.47As FinFETs on metal grain variability
