Impact of intrinsic parameter fluctuations on the performance of HEMTs studied with a 3D parallel drift-diffusion simulator
Intrinsic parameter fluctuations in state-of-the-art high electron mobility transistors (HEMTs) are studied using a 3D parallel drift-diffusion device simulator. Two sources of intrinsic parameter fluctuations have been considered: the random discrete dopants in the d-doped layer and the variations in the material composition of the channel. The effect of those two sources is investigated in a
120 nm gate length pseudomorphic HEMT with an In0.2Ga0.8As channel and in a 50 nm gate length InP HEMT with an In0.7Ga0.3As channel. We have found that the random discrete dopants in the d-doping layer are the major factor introducing the variations in the drive current and the device performance. In the devices studied, the variations in the drive current decrease as a function of
the gate voltage. Furthermore, at a fixed gate voltage, the variations decrease with the drain voltage in the 50 nm InP HEMT while in the 120 nm PHEMT the variations increase with the drain voltage.
keywords: HEMT, 3D parallel drift diffusion simulation, Intrinsic parameter fluctuations, Random discrete dopants
Publication: Article
1624014939385
June 18, 2021
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Intrinsic parameter fluctuations in state-of-the-art high electron mobility transistors (HEMTs) are studied using a 3D parallel drift-diffusion device simulator. Two sources of intrinsic parameter fluctuations have been considered: the random discrete dopants in the d-doped layer and the variations in the material composition of the channel. The effect of those two sources is investigated in a
120 nm gate length pseudomorphic HEMT with an In0.2Ga0.8As channel and in a 50 nm gate length InP HEMT with an In0.7Ga0.3As channel. We have found that the random discrete dopants in the d-doping layer are the major factor introducing the variations in the drive current and the device performance. In the devices studied, the variations in the drive current decrease as a function of
the gate voltage. Furthermore, at a fixed gate voltage, the variations decrease with the drain voltage in the 50 nm InP HEMT while in the 120 nm PHEMT the variations increase with the drain voltage. - N. Seoane, A. J. Garcia-Loureiro, K. Kalna, A. Asenov - 10.1016/j.sse.2007.01.030
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