Congress

Congress

Author/sA. Abdikarimov, G. Indalecio, E. Comesaña, N. Seoane, K. Kalna, A.J. García-Loureiro, A.E. Atamuratov
DOI10.1109/IWCE.2014.6865877
Source17 th International Workshop on Computational Electronics, Paris 2014

High performance computing
Language technologies

Influence of device geometry on electrical characteristics of a 10.7 nm SOI-FinFET

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Publication: Congress

1624015029436

June 18, 2021

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- A. Abdikarimov, G. Indalecio, E. Comesaña, N. Seoane, K. Kalna, A.J. García-Loureiro, A.E. Atamuratov - 10.1109/IWCE.2014.6865877

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