Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability
© 1980-2012 IEEE. A methodology to determine with nanometer resolution the defect density in polycrystalline HfO 2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy measurements. The local defect density ( δox) and thickness (t ox ) of the gate dielectric have been included into a device simulator to evaluate their impact on the I D V G curves of MOSFETs.
keywords: CAFM, high-k, KPFM, MOSFET, polycrystalline dielectric
Publication: Article
1624014950373
June 18, 2021
/research/publications/local-defect-density-in-polycrystalline-high-k-dielectrics-cafm-based-evaluation-methodology-and-impact-on-mosfet-variability
© 1980-2012 IEEE. A methodology to determine with nanometer resolution the defect density in polycrystalline HfO 2 layers has been developed. This methodology is based on experimental data measured with conductive atomic force microscopy and the obtained results have been validated using Kelvin prove force microscopy measurements. The local defect density ( δox) and thickness (t ox ) of the gate dielectric have been included into a device simulator to evaluate their impact on the I D V G curves of MOSFETs. - Couso C., Porti M., Martin-Martinez J., Garcia-Loureiro A., Seoane N., Nafria M. - 10.1109/LED.2017.2680545
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