Article

Article

Author/sN. Seoane, G. Indalecio, E. Comesana, M. Aldegunde, A. J. Garcia-Loureiro and K. Kalna
DOI10.1109/TED.2013.2294213
SourceIEEE Transactions on Electron Devices, 2014
RankingsRanked Q1 in Scopus CiteScore

High performance computing
Language technologies

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

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Publication: Article

1624014941779

June 18, 2021

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- N. Seoane, G. Indalecio, E. Comesana, M. Aldegunde, A. J. Garcia-Loureiro and K. Kalna - 10.1109/TED.2013.2294213

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