Article

Article

Author/sN. Seoane, G. Indalecio, E. Comesana, M. Aldegunde, A. J. Garcia-Loureiro and K. Kalna
DOI10.1109/TED.2013.2294213
SourceIEEE Transactions on Electron Devices, 2014
RankingsRanked Q1 in Scopus CiteScore

High performance computing
Language technologies

Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFET

keywords:

Publication: Article

1624014941779

June 18, 2021

/research/publications/random-dopant-line-edge-roughness-and-gate-workfunction-variability-in-a-nano-ingaas-finfet

- N. Seoane, G. Indalecio, E. Comesana, M. Aldegunde, A. J. Garcia-Loureiro and K. Kalna - 10.1109/TED.2013.2294213

publications_en

Rúa de Jenaro de la Fuente Domínguez,
15782 - Santiago de Compostela.
Telf. +34 881 816 400 · Mail: citius@usc.es

Follow us

CiTIUSContact Team Intranet

ExploreVideo Publications Research Areas

© 2025 Centro Singular de Investigación en Tecnoloxías Intelixentes da USC

Privacy policy Sitemap European Funds