Congress 1739
  • Natalia Seoane, Julian G. Fernandez, Enrique Comesana and Antonio Garcia-Loureiro
  • 18th MOS-AK ESSDERC/ESSCIRC Workshop. Grenoble, Francia. 2021

Semiconductor devices variability: modelling, characterization and data management

The scaling of semiconductor devices leads to larger influence of variability on device performance. Therefore, next generation technology nodes must be based on variability-resistant architectures. TCAD based tools, that include the effect of quantum confinement, are required to assess the impact of variability sources when critical dimensions are below 20 nm. Large ensembles of different device configurations need to be modelled to obtain statistical significance, which greatly increases computational cost and output data. An efficient post-processing of simulation data requires automated tools to extract and analyze the IV characteristic figures-of-merit (FoM). In this workshop, we will introduce in-house-built tools to efficiently model and characterize advanced semiconductor device variability, managing the generated data following the FAIR principles.
Keywords: semiconductor data management, Variability, 3D device simulations,
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