Simulation of electron transport in magnetic tunnel junctions using the drift-diffusion model

In this work we present preliminary results of the simulations done for a (Zn,Co)O/ZnO/(Zn,Co)O MTJ to obtain the I-V spin dependent characteristics and the TMR using an in-house developed simulator. The Poisson equation and two electron continuity equations, one for each spin, are solved self–consistently to take into account separately the contribution of each spin to the total current. In this preliminary work, the results are compared with previous experimental results obtained for a range of low temperatures between 4 K and 100 K

keywords: Magnetotransport, spintronics, modeling, NiN devices, low temperature electron transport