Article 305
Author/s
  • N. Seoane, M. Aldegunde, D. Nagy, M. A. Elmessary, G. Indalecio, A. J. Garcia-Loureiro and K. Kalna
DOI
Source
  • Semiconductor Science and Technology, 2016 - Q1

Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

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