Article 134
Author/s
  • E.Comesaña, M. Aldegunde, A.J.Garcia-Loureiro
DOI
Source
  • Applied Physics Letters, 2011

Spin-polarized transport in a full magnetic pn tunnel junction

Simulations of the tunneling current as a function of voltage and temperature for a Zener diode where both sides are ferromagnetic have been performed. The current is evaluated as a function of the applied bias, the magnetization, and the temperature on the diode. The tunneling magnetoresistance is also analyzed. Mn doped GaAs parameters were used to simulate a highly asymmetric doped diode, which leads to a large difference on the magnetization values between the p and n sides.
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