Congress 1740
  • Julian G. Fernandez, Natalia Seoane, Karol Kalna and Antonio Garcia-Loureiro
  • 13th Spanish Conference on Electron Devices (CDE). Sevilla, España. 2021

Threshold voltage variability study in a 12 nm gate length Nanosheet FET

Nanosheet FETs are strong aspirants to substitute FinFETs in future nanoscale digital applications. The variability in device characteristics is one of the limitations to the scaling and the integration of nanoelectronic devices. The metal grain granularity (MGG) and the line edge roughness (LER) variabilities are the most harmful fluctuations in short channel transistors. In this work, we perform a 3D simulation study of the influence of these variabilities on the performance of a 12 nm gate nanosheet FET.
Keywords: Nanosheet FET, Thresholf voltage, metal grain granularity (MGG), line edge roughness (LER), Drift-diffusion ,3D simulations
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