Tunneling magnetoresistance dependence on the temperature in a ferromagnetic Zener diode
In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature TC near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. A ccording to our calculations the tunneling magnetoresistance has the form TMR (TnC–Tn).
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Publication: Congress
1624015021428
June 18, 2021
/research/publications/tunneling-magnetoresistance-dependence-on-the-temperature-in-a-ferromagnetic-zener-diode
In the present work we focus on the study of the temperature dependence of the tunnelling current in a ferromagnetic Zener diode. We predict the tunneling magnetoresistance dependence on the temperature. Large doping concentrations lead to magnetic semiconductors with Curie temperature TC near or over room temperature and this will facilitate the introduction of new devices that make use of the ferromagnetism effects. A ccording to our calculations the tunneling magnetoresistance has the form TMR (TnC–Tn). - E Comesaña, M Aldegunde and A García-Loureiro - 10.1088/1742-6596/193/1/012104
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