Dark Current Optimization of 4-Transistor Topologies in Standard CMOS Technologies for Time-of-Flight Sensors

This paper studies the dark current (DC) of the photodiode (PD), the transmission gate (TG), and the floating diffusion (FD) in 4-Transistor (4T) pixels in standard CMOS technologies for Time-of-Flight (ToF) sensors through device simulations. The paper addresses the layout optimization in terms of DC for an nwell/psub and two custom pinned-photodiodes (PPD), stating their pros and cons.

Palabras clave: Time-of-Flight Sensors, CMOS estandar, 4-T photodiodes