MOSITO-ASD: Development of modelling and simulation tools for advanced semiconductor devices: application to the study of intrinsic parameter fluctuations

Development of simulation tools applied to the study of fluctuations and material variations in advanced MOSFET.


The project objectives can be classified into four main tasks:

  1. Simulation of devices based on ferromagnetic semiconductors.
  2. Simulation of silicon and GaN devices using the Monte Carlo method.
  3. Three dimensional parallel simulation using the drift-diffusion and Monte Carlo models with quantum corrections.
  4. Study of the influence of intrinsic parameter fluctuations on the performance of devices.