Analytical model for P-N junctions under point source illumination

An analytical model of the photoresponse of p-n junctions under a point source illumination is presented. The model measures the response of different regions of the pixel in terms of current. Both p-n+ and p-Nwell junction photodiodes were fabricated in a standard UMC 90nm technology and tested. Model and experimental data reveal a similar behaviour.

keywords: CMOS image sensors, nanofabrication, p-n junctions, photodiodes, semiconductor device models, complementary metal-oxide semiconductor image sensors, device fabrication, junction photodiodes, p-n junction, photoresponse, pixels, size 90 nm,