Dark Current Optimization of 4-Transistor Topologies in Standard CMOS Technologies for Time-of-Flight Sensors
This paper studies the dark current (DC) of the photodiode (PD), the transmission gate (TG), and the floating diffusion (FD) in 4-Transistor (4T) pixels in standard CMOS technologies for Time-of-Flight (ToF) sensors through device simulations. The paper addresses the layout optimization in terms of DC for an nwell/psub and two custom pinned-photodiodes (PPD), stating their pros and cons.
keywords: Time-of-Flight Sensors, CMOS estandar, 4-T photodiodes
Publication: Congress
1624015031736
June 18, 2021
/research/publications/dark-current-optimization-of-4-transistor-topologies-in-standard-cmos-technologies-for-time-of-flight-sensors
This paper studies the dark current (DC) of the photodiode (PD), the transmission gate (TG), and the floating diffusion (FD) in 4-Transistor (4T) pixels in standard CMOS technologies for Time-of-Flight (ToF) sensors through device simulations. The paper addresses the layout optimization in terms of DC for an nwell/psub and two custom pinned-photodiodes (PPD), stating their pros and cons. - Julio Illade-Quinteiro, Víctor Brea, Paula López, Diego Cabello - 10.1109/ISCAS.2015.7168643
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