Research
Publications
Julián García Fernández

Publications

Julián García Fernández

2023
Estudio estadístico de fluctuaciones en transistores MOSFET multipuerta ultraescalados
Author/s: Julián García Fernández · Tutor: Antonio García Loureiro
Thesis · 2023-12-15
Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques
Author/s: Julian G. Fernandez, Guéric Etesse, Enrique Comesaña, Natalia Seoane, Xiangyu Zhu, Kazuhiko Hirakawa, Antonio Garcia-Loureiro, and Marc Bescond
Congress · 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). Kobe, Japan. 2023
An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs
Author/s: Julian G. Fernandez, Natalia Seoane, Enrique Comesaña, Juan C. Pichel, Antonio Garcia-Loureiro
Article · Solid-state Electronics, 2023
Ranked Q3Download available
A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint
Author/s: Antonio García-Loureiro , Natalia Seoane , Julián G. Fernández , Enrique Comesaña , Juan C. Pichel
Article · PLoS One, 2023
Download available
A general toolkit for advanced semiconductor transistors: from simulation to machine learning
Author/s: Antonio Jesús García-Loureiro; Natalia Seoane; Julián García Fernández; Enrique Comesaña
Congress · IEEE Latin American Electron Devices Conference 2023 (LAEDC2023). Puebla, Mexico. 2023
Rated B in ICORE
Analysis of the statistical impact of variability in a 12 nm nanosheet FET
Author/s: Julian G. Fernandez, Natalia Seoane, Enrique Comesaña, Antonio García-Loureiro
Congress · 14th Spanish Conference on Electron Devices (CDE 2023). Valencia, España. 2023
An accurate neural network model to study threshold voltage variability due to metal grain granularity in Nanosheet FETs
Author/s: Julian G. Fernandez, Enrique Comesana, Natalia Seoane, Juan C. Pichel , and Antonio García-Loureiro
Congress · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon. Granada, España. 2023
2022
A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET
Author/s: Julian G. Fernandez, Natalia Seoane, Enrique Comesaña, Antonio Garcia-Loureiro
Article · Solid-state Electronics, 2022
Ranked Q2
Pelgrom-based predictive model to estimate metal grain granularity and line edge roughness in advanced multigate MOSFETs
Author/s: Julian G. Fernandez, Natalia Seoane, Enrique Comesaña, Antonio García-Loureiro
Article · IEEE Journal of the Electron Devices Society, 2022
Ranked Q2Download available
A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET
Author/s: Julian G. Fernandez, Natalia Seoane, Enrique Comesaña, Antonio Garcia-Loureiro
Congress · 2022 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). Granada, España. 2022
2021
Impact of metal grain granularity on three gate-all-around advanced architectures
Author/s: J. G. Fernandez, N. Seoane, E. Comesaña, K. Kalna and A. García-Loureiro
Congress · 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD). Granada, España. 2021
Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs
Author/s: Natalia Seoane, Julian G. Fernandez, Karol Kalna, Enrique Comesaña, Antonio García-Loureiro
Article · IEEE Electron Device Letters, 2021
Ranked Q1
Semiconductor devices variability: modelling, characterization and data management
Author/s: Natalia Seoane, Julian G. Fernandez, Enrique Comesana and Antonio Garcia-Loureiro
Congress · 18th MOS-AK ESSDERC/ESSCIRC Workshop. Grenoble, Francia. 2021
Threshold voltage variability study in a 12 nm gate length Nanosheet FET
Author/s: Julian G. Fernandez, Natalia Seoane, Karol Kalna and Antonio Garcia-Loureiro
Congress · 13th Spanish Conference on Electron Devices (CDE). Sevilla, España. 2021