Channel Inversion Charge Dependence on Silicon Thickness in Ultra Thin Double-Gate SOI MOSFETs

Publicación: Congreso

1624015020590

18 de xuño de 2021

/research/publications/channel-inversion-charge-dependence-on-silicon-thickness-in-ultra-thin-double-gate-soi-mosfets

- R.Valín, C.Sampedro, N.Seoane, M.Aldegunde, A.J.García Loureiro, A.Godoy, F.Gámiz

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