Publications

A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices

Optimization of thermionic cooling semiconductor heterostructures with deep learning techniques

An accurate machine learning model to study the impact of realistic metal grain granularity on Nanosheet FETs

Photogeneration and Performance Optimization (PhPO): A New Algorithm to Improve the Performance of Vertical Epitaxial Hetero-Structure Architecture Laser Power Converters

A machine learning approach to model the impact of line edge roughness on gate-all-around nanowire FETs while reducing the carbon footprint

Improving the performance of photovoltaic laser power converters using automatic global optimization techniques

A general toolkit for advanced semiconductor transistors: from simulation to machine learning

Accurate Modelling of a GaAs-Based Laser Power Converter

Analysis of the statistical impact of variability in a 12 nm nanosheet FET

An accurate neural network model to study threshold voltage variability due to metal grain granularity in Nanosheet FETs

Towards Ultra-High Efficiency Laser Power Converters: 3C- SiC-Based Vertical Epitaxial Hetero-Structure Architecture Devices

A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

Pelgrom-based predictive model to estimate metal grain granularity and line edge roughness in advanced multigate MOSFETs

A comprehensive Pelgrom-based on-current variability model for FinFET, NWFET and NSFET

Laser power converter architectures based on 3C-SiC with efficiencies > 80%

Dependence of the vertical - tunnel - junction GaAs solar cell on concentration and temperature

GaAs Vertical-Tunnel-Junction Converter for Ultra-High Laser Power Transfer

Impact of metal grain granularity on three gate-all-around advanced architectures

Simulations of Statistical Variability in n-Type FinFET, Nanowire, and Nanosheet FETs

Semiconductor devices variability: modelling, characterization and data management

Threshold voltage variability study in a 12 nm gate length Nanosheet FET

Does the threshold voltage extraction method affect device variability?

Numerical optimisation and recombination effects on the vertical-tunnel-junction (VTJ) GaAs solar cell up to 10,000 suns

Ultra-efficient intrinsic-vertical-tunnel-junction structures for next-generation concentrator solar cells

Combined nanoscale KPFM characterization and device simulation for the evaluation of the MOSFET variability related to metal gate workfunction fluctuations

A multi-method simulation toolbox to study performance and variability of nanowire FETs

Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability

Impact of Gate Edge Roughness Variability on FinFET and Gate-All-Around Nanowire FET

Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

Vertical-Tunnel-Junction (VTJ) Solar Cell for Ultra-High Light Concentrations (>2000 Suns)

Impact of threshold voltage extraction methods on semiconductor device variability

Study of GaAs Vertical Solar Cells at High Concentration Levels

Spatial Sensitivity of Silicon GAA Nanowire FETs Under Line Edge Roughness Variations

Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

FoMPy: A figure of merit extraction tool for semiconductor device simulations

FinFET versus gate-all-around nanowire FET: Performance, scaling, and variability

MPI-Performance-Aware-Reallocation: method to optimize the mapping of processes applied to a cloud infrastructure

Impact of Cross-Sectional Shape on 10-nm Gate Length InGaAs FinFET Performance and Variability

Metal Grain Granularity Study on a Gate-All-Around Nanowire FET

A study of the influence of VM allocation policies on MPI Bcast and MPI Exchange latency in cloud

Characterisation of a tunnel field-effect transistor using 2D TCAD simulations

Metal grain work-function variability in GAA Si nanowire via a fluctuation sensitivity map

Local Defect Density in Polycrystalline High-k Dielectrics: CAFM-Based Evaluation Methodology and Impact on MOSFET Variability

Fluctuation Sensitivity Map: A Novel Technique to Characterise and Predict Device Behaviour Under Metal Grain Work-Function Variability Effects

Simulations of a Planar Silicon Tunnel Field-Effect Transistor

2D Simulation Evaluation of PE-TFET device

Band gaps modelling of dilute bismide (GaBi x As 1-x) and dilute nitride (GaN x As 1-x)

GWM: An intelligent task manager applied to semiconductor statistical studies

Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations

Impact of cross-section of 10.4 nm gate length In0.53Ga0.47As FinFETs on metal grain variability

Study of point-to-point communication latency for MPI implementations in cloud

Simulation study of scaled In0.53Ga0.47As and Si FinFETs for sub-16 nm technology nodes

Study of Metal-Gate Work-Function Variation Using Voronoi Cells: Comparison of Rayleigh and Gamma Distributions

Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs

Scaling/LER Study of Si GAA Nanowire FET using 3D Finite Element Monte Carlo Simulations

Implementation of numerical methods for nanoscaled semiconductor device simulation using OpenCL

Performance of Two Possible Implementations of ILUT Preconditioners in the 3D Nanodevice Simulation

Three-Dimensional Simulations of Random Dopant and Metal-Gate Workfunction Variability in an In0.53Ga0.47As GAA MOSFET

Performance of numerical simulations on the cloud

Two-Dimensional Monte Carlo Simulation of DGSOI MOSFET

3D ‘atomistic’ simulations of dopant induced variability in nanoscale implant free In0.75Ga0.25As MOSFETs

Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Parallel performance of the PETSc Krylov methods applied to linear systems of 3D nanodevice simulators

Multi-Subband Monte Carlo Simulation of Oxide Thickness Fluctuation on SGSOI MOSFETs

3D Monte Carlo simulations of a 25 nm gate length SOI FinFET using unstructured tetrahedral grids

Impact of Random Dopant Fluctuations on a Tri-Gate MOSFET

Channel Inversion Charge Dependence on Silicon Thickness in Ultra Thin Double-Gate SOI MOSFETs

Reduction of the self-forces in Monte Carlo simulations of semiconductor devices on unstructured meshes

Impact of intrinsic parameter fluctuations on the performance of In0.75Ga0.25As implant free MOSFETs

Optimization of linear systems for 3D parallel simulation of semiconductor devices: Application to statistical studies

Optimización de un simulador 3D paralelo aplicado al estudio de fluctuaciones de parámetros intrínsecos en dispositivos HEMT